GROWTH OF INGAASSB LAYERS IN THE MISCIBILITY GAP - USE OF VERY-LOW-ENERGY ION IRRADIATION TO REDUCE ALLOY DECOMPOSITION

Authors
KASPI R BARNETT SA HULTMAN L
Citation
R. Kaspi et al., GROWTH OF INGAASSB LAYERS IN THE MISCIBILITY GAP - USE OF VERY-LOW-ENERGY ION IRRADIATION TO REDUCE ALLOY DECOMPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 978-987
Citations number
40
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
978 - 987
Database
ISI
SICI code
1071-1023(1995)13:3<978:GOILIT>2.0.ZU;2-2