STRUCTURAL AND ELECTRONIC EFFECTS OF ARGON SPUTTERING AND REACTIVE ION ETCHING ON IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING

Authors
MASLAR JE DORSTEN JF BOHN PW AGARWALA S ADESIDA I CANEAU C BHAT R
Citation
Je. Maslar et al., STRUCTURAL AND ELECTRONIC EFFECTS OF ARGON SPUTTERING AND REACTIVE ION ETCHING ON IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 988-994
Citations number
39
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
988 - 994
Database
ISI
SICI code
1071-1023(1995)13:3<988:SAEEOA>2.0.ZU;2-V