STRUCTURAL AND ELECTRONIC EFFECTS OF ARGON SPUTTERING AND REACTIVE ION ETCHING ON IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING
Je. Maslar et al., STRUCTURAL AND ELECTRONIC EFFECTS OF ARGON SPUTTERING AND REACTIVE ION ETCHING ON IN0.53GA0.47AS AND IN0.52AL0.48AS STUDIED BY INELASTIC LIGHT-SCATTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 988-994