GAAS HETEROEPITAXIAL GROWTH ON SI SUBSTRATES WITH THIN SI INTERLAYERSIN-SITU ANNEALED AT HIGH-TEMPERATURES

Authors
YODO T TAMURA M
Citation
T. Yodo et M. Tamura, GAAS HETEROEPITAXIAL GROWTH ON SI SUBSTRATES WITH THIN SI INTERLAYERSIN-SITU ANNEALED AT HIGH-TEMPERATURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1000-1005
Citations number
14
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
1000 - 1005
Database
ISI
SICI code
1071-1023(1995)13:3<1000:GHGOSS>2.0.ZU;2-Q