DETERMINATION OF PHYSICAL-MECHANISMS CONTRIBUTING TO THE DIFFERENCE BETWEEN DRAIN AND SOURCE RESISTANCES IN SHORT-CHANNEL MOSFETS

Knowledge of the difference between the drain and source resistances ( R(d) - R(s)) of MOSFETs provides useful information on how the perform ance of MOSFETs will vary if the drain and source regions are intercha nged. Device simulations are carried out to study the physical mechani sms underlying (R(d) - R(s)) in MOSFETs. The present results show that (R(d) - R(s)) is mainly due to the difference in the drain and source contact resistances, not to the difference in the source and drain do ping densities, nor to misalignment of the gate with respect to the so urce and drain regions.