THE MEASUREMENT AND ANALYSIS OF 1 F NOISE IN GAASFETS/

Authors
ABDALA MA IQBAL MA JONES BK
Citation
Ma. Abdala et al., THE MEASUREMENT AND ANALYSIS OF 1 F NOISE IN GAASFETS/, Solid-state electronics, 39(2), 1996, pp. 287-295
Citations number
35
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
2
Year of publication
1996
Pages
287 - 295
Database
ISI
SICI code
0038-1101(1996)39:2<287:TMAAO1>2.0.ZU;2-M
Abstract
Detailed measurements are reported of the 1/f noise in GaAsFETs. The r esults are analysed using information obtained from detailed trap char acterization. It is found that the 1/f noise intensity is very variabl e between specimens, does not follow the Hooge relation and appears to be related, under some conditions, to the traps which produce the gen eration-recombination noise which is also observed.