EFFECT OF SUBSTRATE BIAS IN BULK AND SOI SIGE-CHANNEL P-MOSFETS

Authors
NIU GF RUAN G
Citation
Gf. Niu et G. Ruan, EFFECT OF SUBSTRATE BIAS IN BULK AND SOI SIGE-CHANNEL P-MOSFETS, Solid-state electronics, 39(2), 1996, pp. 305-307
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
2
Year of publication
1996
Pages
305 - 307
Database
ISI
SICI code
0038-1101(1996)39:2<305:EOSBIB>2.0.ZU;2-B