ENHANCED DEPOSITION RATE OF LITHIUM PHOSPHORUS OXYNITRIDE THIN-FILMS BY SPUTTERING OF LI3PO4 IN N-2-HE GAS-MIXTURES

Authors
BATES JB YU XH
Citation
Jb. Bates et Xh. Yu, ENHANCED DEPOSITION RATE OF LITHIUM PHOSPHORUS OXYNITRIDE THIN-FILMS BY SPUTTERING OF LI3PO4 IN N-2-HE GAS-MIXTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(1), 1996, pp. 34-37
Citations number
11
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
14
Issue
1
Year of publication
1996
Pages
34 - 37
Database
ISI
SICI code
0734-2101(1996)14:1<34:EDROLP>2.0.ZU;2-9
Abstract
The addition of He to N-2 increases significantly the deposition rate of lithium phosphorus oxynitride thin films by radio frequency magnetr on sputtering of Li3PO4 targets. From the correlation with the optical emission intensity, the enhanced rate is attributed to an increase in the N-2(+) ion concentration in the plasma due to Penning ionization. The ionic conductivity of the films deposited at higher rates in He+2 0% N-2 compares favorably with that of films deposited at lower rates in pure N-2. (C) 1996 American Vacuum Society.