DETERMINATION OF THE LATERAL SPREAD OF XE IONS IN SILICON-NITRIDE ANDHYDRATED SILICON-NITRIDE FILMS BY OBLIQUE-INCIDENCE RUTHERFORD BACKSCATTERING

Both 100 and 200 keV Xe ions were implanted into silicon nitride (Si3N 4) films and 600, 800, and 1000 keV Xe ions were implanted into hydrat ed silicon nitride (Si1N1.375H0.603) films at different angles. In ord er to determine the lateral spread of Xe ions implanted in Si3N4 and S i1N1.375H0.635 at room temperature, both normal and oblique incidence Rutherford backscattering were used. The results show that marked impr ovements in the measurement sensitivity to lateral spread is obtained by oblique incidence Rutherford backscattering. The lateral spread obt ained agrees with the TRIM'92 prediction within experimental error for the 100-200 keV Xe+ implanted into the Si3N4 films, but a significant deviation of the lateral spread from the calculated value is observed for 600, 800, and 1000 keV Xe+ implanted into Si1N1.375H0.603 film. ( C) 1996 American Vacuum Society.