GROWTH TEMPERATURE-DEPENDENCE OF ALGAAS SPONTANEOUS VERTICAL QUANTUM-WELLS ON V-GROOVED SUBSTRATES BY LOW-PRESSURE METALORGANIC VAPOR-PHASEEPITAXY

We have studied the growth of AlGaAs on V-grooved GaAs substrates by l ow-pressure (100 Torr) metalorganic vapor phase epitaxy (MOVPE) in the temperature range of 600 to 700 degrees C, The growth temperature dep endence of facet formation, the facet dependence of AlGaAs composition on the V-grooves, and the growth temperature dependence of spontaneou s vertical quantum well (SVQW) widths have been investigated by low te mperature photoluminescence (PL), transmission electron micrograph (TE M) and spectrally and spatially resolved low temperature cathodolumine scence (CL). The width of the SVQW varies from 140 to 250 Angstrom wit h increasing the growth temperature from 600 to 700 degrees C.