LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/

Authors
BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation
Yb. Bolkhovityanov et al., LIQUID-PHASE EPITAXY OF HIGHLY STRAINED INGAASP GAAS FILMS IN THE 1.4-1.8 EV INTERVAL OF BAND-GAPS/, Journal of crystal growth, 158(3), 1996, pp. 217-223
Citations number
31
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
158
Issue
3
Year of publication
1996
Pages
217 - 223
Database
ISI
SICI code
0022-0248(1996)158:3<217:LEOHSI>2.0.ZU;2-H
Abstract
Highly elastically strained films of InGaAsP solid solutions in the 1. 4-1.8 eV interval of band gaps were grown on GaAs(111)B substrates by liquid phase epitaxy (LPE) for the first time. Elastic strains close t o 1% are reached. The determined critical thicknesses exceed the predi ctions of the energy equilibrium theory by Matthews and Blakeslee by a s much as an order of magnitude. Up to this date these data are record results for LPE technology of superthin films and for the InGaAsP/GaA s quaternary films for all technologies.