STUDY OF GENERATION OF GAXIN1-XPYAS1-Y TRANSITION LAYERS OBTAINED BY LIQUID-PHASE EPITAXY

The feasibility of fabrication of the so-called GaxIn1-xPy As-1-y tran sition layers on the GaAs substrate by liquid phase epitaxy is demonst rated. It is shown that the mast favorable substrate to fabricate good quality (GaxIn1-xPyAs1-y)(l) transition layers is GaAs[111]A, which i s stable for a wide range of compositions. It is also shown that the f ormation of thin graded optical windows of GaxIn1-yPyAs1-y compounds o n the GaAs[111]A surface may be realized in a reproducible manner for very short-time exposures.