DEPENDENCE OF THE ACTIVITY EFFICIENCY OF MG-IMPLANTED INTO GAAS ON THE CONCENTRATION OF AS DOPED INTO A-SIH ENCAPSULANTS

Authors
YOKOTA K SAKAGUCHI M INOHARA H NAKANISHI H TAMURA S HORINO Y CHAYAHARA A SATHO M HIRAI K TAKANO H KUMAGAYA M
Citation
K. Yokota et al., DEPENDENCE OF THE ACTIVITY EFFICIENCY OF MG-IMPLANTED INTO GAAS ON THE CONCENTRATION OF AS DOPED INTO A-SIH ENCAPSULANTS, Solid-state electronics, 37(1), 1994, pp. 9-15
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
1
Year of publication
1994
Pages
9 - 15
Database
ISI
SICI code
0038-1101(1994)37:1<9:DOTAEO>2.0.ZU;2-O
Abstract
The surface of GaAs implanted with 100keV Mg+ ions at a dose of 1 x 10 (15) cm-2 was encapsulated with As-doped a-Si: H with a thickness of a bout 80 nm. The sheet carrier concentration in thermally annealed samp les increased with an increase in the concentration of As in the a-Si: H encapsulant. A high sheet carrier concentration of about 3 x 10(14) cm-1 was achieved on the sample capped with the a-Si: H film doped wit h As of 2 x 10(20) cm-3 after annealed at 800-degrees-C for 15 min. Th e diffusivity of the implanted Mg was retarded with an increase in the concentration of As in the a-Si:H encapsulant.