A SELF-CONSISTENT CALCULATION OF THE SMALL-SIGNAL PARAMETERS FOR ALGAAS GAAS AND ALGAAS INGAAS GAAS HEMTS

Authors
LIU KW ANWAR AFM
Citation
Kw. Liu et Afm. Anwar, A SELF-CONSISTENT CALCULATION OF THE SMALL-SIGNAL PARAMETERS FOR ALGAAS GAAS AND ALGAAS INGAAS GAAS HEMTS, Solid-state electronics, 37(1), 1994, pp. 51-54
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
1
Year of publication
1994
Pages
51 - 54
Database
ISI
SICI code
0038-1101(1994)37:1<51:ASCOTS>2.0.ZU;2-W
Abstract
A detail modeling of the d.c. small-signal parameters for AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs (PHEMTs) is presented . The theoretical calculations are based on self-consistent solution o f Schrodinger and Poisson's equations. Study shows that pseudomorphic HEMTs have a higher transconductance and unity current gain cut-off fr equency than those of normal AlGaAs/GaAs HEMTs. In this paper, the cal culated transconductances are compared with experimental data and the results show excellent agreement for both devices.