FOWLER-NORDHEIM TUNNELING CURRENT IN A YTTRIUM SILICON DIOXIDE SILICON MOS STRUCTURE

Authors
KONG SO KWOK CY
Citation
So. Kong et Cy. Kwok, FOWLER-NORDHEIM TUNNELING CURRENT IN A YTTRIUM SILICON DIOXIDE SILICON MOS STRUCTURE, Solid-state electronics, 37(1), 1994, pp. 189-191
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
1
Year of publication
1994
Pages
189 - 191
Database
ISI
SICI code
0038-1101(1994)37:1<189:FTCIAY>2.0.ZU;2-N