TRANSCONDUCTANCE COMPRESSION NEAR SUBTHRESHOLD OF GAAS FLOATED ELECTRON CHANNEL FIELD-EFFECT TRANSISTOR

Authors
LEE YJ KIM CT HONG SC KWON YS
Citation
Yj. Lee et al., TRANSCONDUCTANCE COMPRESSION NEAR SUBTHRESHOLD OF GAAS FLOATED ELECTRON CHANNEL FIELD-EFFECT TRANSISTOR, Solid-state electronics, 37(1), 1994, pp. 207-210
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
1
Year of publication
1994
Pages
207 - 210
Database
ISI
SICI code
0038-1101(1994)37:1<207:TCNSOG>2.0.ZU;2-A