ANNEALING OF GAMMA-IRRADIATED AL-GATE NMOS TRANSISTORS

Citation
M. Pejovic et al., ANNEALING OF GAMMA-IRRADIATED AL-GATE NMOS TRANSISTORS, Solid-state electronics, 37(1), 1994, pp. 215-216
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
37
Issue
1
Year of publication
1994
Pages
215 - 216
Database
ISI
SICI code
0038-1101(1994)37:1<215:AOGANT>2.0.ZU;2-F