CARRIER CAPTURE AS A MECHANISM FOR DEFECT MIGRATION AT SEMICONDUCTOR SURFACES

Authors
LENGEL G WEIMER M GRYKO J ALLEN RE
Citation
G. Lengel et al., CARRIER CAPTURE AS A MECHANISM FOR DEFECT MIGRATION AT SEMICONDUCTOR SURFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1144-1149
Citations number
32
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
1144 - 1149
Database
ISI
SICI code
1071-1023(1995)13:3<1144:CCAAMF>2.0.ZU;2-A