EFFECT OF CRUCIBLE MATERIALS ON IMPURITIES IN LPE GAAS

Authors
MO L BUTCHER KSA ALEXIEV D
Citation
L. Mo et al., EFFECT OF CRUCIBLE MATERIALS ON IMPURITIES IN LPE GAAS, Journal of crystal growth, 158(4), 1996, pp. 403-408
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
158
Issue
4
Year of publication
1996
Pages
403 - 408
Database
ISI
SICI code
0022-0248(1996)158:4<403:EOCMOI>2.0.ZU;2-#
Abstract
LPE GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacit ance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentrations ranging f rom 5 X 10(14) to 8 X 10(15) carriers per cm(-3). DLTS data has shown that all epitaxial layers have deep level traps.