EPITAXIAL-GROWTH OF 3C-SIC ON SI(111) FROM HEXAMETHYLDISILANE

The morphology and microstructure of 3C-SiC thin films grown on Si(111 ) substrate by chemical vapor deposition at ambient pressure has been investigated. Hexamethyldisilane (HMDS) was used as the source gas and a 8% H-2 + Ar mixture as the carrier gas. SiC films were grown by one -step and two-step growth procedures. The thin films grown by these di fferent processes were studied using optical microscopy, X-ray diffrac tion and transmission electron microscopy. Optimizing the one-step gro wth process gave a highly oriented 3C-SiC film with a [111] texture. W ith the two-step growth process, columnar grains were found to grow on top of a continuous single crystal layer and, under optimum growth co nditions, single crystal epitaxial films could be obtained. Effects of temperature and diffusion on the characteristics of the films grown b y the one-step and two-step procedures are discussed.