NITROGEN IN-SITU DOPED POLY BUFFER LOGOS - SIMPLE AND SCALABLE ISOLATION TECHNOLOGY FOR DEEP-SUBMICRON SILICON DEVICES

This paper describes a novel LOGOS (LOCal Oxidation of Silicon) techno logy that uses nitrogen in-situ doped amorphous-Si as a buffer layer i nstead of the undoped poly-Si used in conventional Poly Buffered LOGOS (PBL). This technology makes it possible to use a thin 6-nm pad oxide by preventing the formation of voids in Si buffer layer and improves edge morphology and effective dimension loss, Therefore, the technolog y will be used in advanced LSI fabrication with KrF lithography, notwi thstanding that the number of processing steps is the same as conventi onal PBL, This new LOGOS technology is the most promising isolation te chnology for the deep-submicron era due to its simplicity and scalabil ity.