ANALYSIS OF FLOATING BODY INDUCED TRANSIENT BEHAVIORS IN PARTIALLY DEPLETED THIN-FILM SOI DEVICES

Emphasis toward manufacturability of thin film SOI devices has prompte d more attention on partially depleted devices [1], [2], In this paper , drain current transients in partially depleted SOI devices due to fl oating-body effect are investigated quantitatively, An one-dimensional analytical model is developed to predict the transient effect and MED ICI simulation is performed to confirm the model. With the model, the amount of the turn-on current enhancement and the turn-off current sup pression are calculated, The transient characteristics can be used in investigating the quality of the SOI materials by determining the carr ier lifetime. The impact of the transient effect on the device paramet er extraction is described.