SCALING RULE FOR OPFET

Authors
PAL BB CHATTOPADHYAY SN
Citation
Bb. Pal et Sn. Chattopadhyay, SCALING RULE FOR OPFET, I.E.E.E. transactions on electron devices, 43(2), 1996, pp. 368-369
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
2
Year of publication
1996
Pages
368 - 369
Database
ISI
SICI code
0018-9383(1996)43:2<368:SRFO>2.0.ZU;2-J
Abstract
A scaling rule has been suggested to miniaturize the ion implanted GaA s optical field effect transistor (OPFET). The absorption coefficient and the generation rate have been scaled alongwith electrical paramete rs and device dimensions. Plots have been made for drain-source curren t, cut-off frequency, and the de power dissipation of the device.