MBE GROWTH OF LATTICE-MATCHED ZNCDMGSE QUATERNARIES AND ZNCDMGSE ZNCDSE QUANTUM-WELLS ON INP SUBSTRATES/

We report the growth and characterization of a new wide bandgap II-VI alloy, ZnxCdyMg1-x-ySe, grown lattice-matched to InP. High quality qua ternary layers with bandgaps ranging from 2.4 to 3.1 eV were grown by molecular beam epitaxy. The bandgaps and lattice constants were measur ed using photoluminescence and single crystal Theta-2 Theta scans. Qua ntum well structures with quaternary barriers and ZnCdSe wells were al so grown, entirely lattice matched to InP. Their photoluminescence pro perties suggest that these materials are suitable for the design of vi sible semiconductor lasers spanning the blue, green, and yellow region s of the visible range. The absence of strain in these heterostructure s is expected to improve the reliability of the materials in device ap plications.