EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/

Authors
BUGGE F ERBERT G PROCOP M RECHENBERG I ZEIMER U WEYERS M
Citation
F. Bugge et al., EFFECT OF GROWTH TEMPERATURE ON PERFORMANCE OF ALGAAS INGAAS/GAAS QW LASER-DIODES/, Journal of electronic materials, 25(2), 1996, pp. 309-312
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
2
Year of publication
1996
Pages
309 - 312
Database
ISI
SICI code
0361-5235(1996)25:2<309:EOGTOP>2.0.ZU;2-I
Abstract
Growth and characterization results are presented for high-power laser diodes with AlGaAs cladding and waveguide layers and strained In1-xGa xAs quantum wells with 0.09 < x < 0.25 grown by metalorganic vapor pha se epitaxy at different temperatures. Photoluminescence at 300 and 10K , Auger spectroscopy, and high-resolution x-ray measurements are discu ssed. Broad area laser diodes have been fabricated with different cavi ty length and threshold current densities, absorption coefficients, in ternal efficiencies, and degradation rates have been measured.