ON THE THERMALLY STIMULATED CONDUCTIVITY WITH SMALL RECAPTURE RATE AND TEMPERATURE-DEPENDENT CAPTURE CROSS-SECTIONS

Citation
Sd. Singh et al., ON THE THERMALLY STIMULATED CONDUCTIVITY WITH SMALL RECAPTURE RATE AND TEMPERATURE-DEPENDENT CAPTURE CROSS-SECTIONS, Journal of electronic materials, 25(2), 1996, pp. 321-323
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
25
Issue
2
Year of publication
1996
Pages
321 - 323
Database
ISI
SICI code
0361-5235(1996)25:2<321:OTTSCW>2.0.ZU;2-D
Abstract
Thermally stimulated conductivity (TSC) peaks corresponding to small r ecapture rate and temperature dependent capture cross sections are inv estigated. The shape of the TSC peak is studied by computing the shape factor mu(g)(x) not only at the fractional intensity x = 1/2 as done conventionally but also at x = 2/3 and 4/5. It is found that for a par ticular value of x, mu(g)(x) depends on u(m) = E/kT(m) (E = activation energy, k = Boltzmann's constant, T-m = peak temperature). A set of e xpressions based on the shape of the peak has been derived, which in p rinciple can be used to evaluate the activation energy of such TSC pea ks. The applicability of those expressions has been tested by consider ing some numerically computed and experimental TSC peaks.