APPLICATION OF ELECTRON-BEAM LITHOGRAPHY FOR DOWNSCALING OF SOI-BIPOLAR AND BICMOS

Authors
SAUTER M BERTAGNOLLI E KNAPEK E STEMMER A FROSCHLE B EISELE I KLOSE H
Citation
M. Sauter et al., APPLICATION OF ELECTRON-BEAM LITHOGRAPHY FOR DOWNSCALING OF SOI-BIPOLAR AND BICMOS, Microelectronic engineering, 30(1-4), 1996, pp. 31-34
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
31 - 34
Database
ISI
SICI code
0167-9317(1996)30:1-4<31:AOELFD>2.0.ZU;2-8
Abstract
A direct-write sub-100-nm electron beam lithography has been used for scaling of a novel lateral bipolar structure. The keyprocess is a lith ographic base definition by using small PMMA structures as implantatio n masks. Downscaling of base widths into the sub-100-nm-regime could b e successfully demonstrated. Process simulation is used to estimate th e effects of process parameters on device scaling. The physical and te chnological effects which are responsible for base formation are inten sively discussed. A relation for base formation is derived and confirm ed by electrical measurements.