Optical proximity effects arising from individual resist characteristi
cs are investigated. The parameters studied are those used in photores
ist exposure and development simulation using the SOLID and Prolith/2
programs. The optical proximity effect is found to be independent of t
he exposure parameters but greatly affected by the development process
and is shown to be a function of the Mack parameter, n, which is rela
ted to the resist contrast, gamma. Finally, in order to put this effec
t into perspective with other resist selection criteria, the developme
nt parameter, n, is also shown to be related to wall angle and depth-o
f-focus (DOF).