CHARACTERIZATION OF EMBEDDED PHASE-SHIFT MASKS BY REFLECTANCE-TRANSMITTANCE MEASUREMENT

Authors
Citation
Z. Cui et Pd. Prewett, CHARACTERIZATION OF EMBEDDED PHASE-SHIFT MASKS BY REFLECTANCE-TRANSMITTANCE MEASUREMENT, Microelectronic engineering, 30(1-4), 1996, pp. 145-148
Citations number
2
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
145 - 148
Database
ISI
SICI code
0167-9317(1996)30:1-4<145:COEPMB>2.0.ZU;2-G
Abstract
A simple and inexpensive method has been applied to the determination of transmission and phase shifting of fully embedded phase shift masks . The method is based on the measurement of reflectance and transmitta nce (R-T) of the embedded layer. A S-mirror reflection system has been developed to carry out the R-T measurement and a computer program has been written to calculate the real and imaginary components of refrac tive index (n, k), and hence the phase shifting and attenuating proper ties, of an embedded layer. The effectiveness and accuracy of the R-T method has been confirmed by experiment.