In this paper TiNx (x > 1.3) as a new material suitable for using as a
n embedded layer for an attenuated phase shift mask (APSM) is presente
d. TiNx thin film was formed by plasma sputtering under a gas mixture
of Ar and N-2 (40:2 sccm). The related characteristics of TiNx at 365
nn (i-line) wavelength are as follows: n (refractive index) similar to
3.07; k (absorbance coefficient) similar to 0.531; R (reflectivity) 2
7 similar to 30%; rho (resistivity) similar to 52 mu Omega-cm (132 nm
on quartz). For required phase shift degree theta=180 degrees, calcula
ted thickness d of TiNx film is 88.2 nn, and transmittance T under 365
nm wavelength at this thickness is 14.5 % which is within the useful
range for APSM. TiNx film also has good electrical conductivity, suita
ble for e-beam direct-write in patterning mask.