LARGE-FIELD (GREATER-THAN-20X25 MM(2)) REPLICATION BY EUV LITHOGRAPHY

Authors
HAGA T TINONE MCK TAKENAKA H KINOSHITA H
Citation
T. Haga et al., LARGE-FIELD (GREATER-THAN-20X25 MM(2)) REPLICATION BY EUV LITHOGRAPHY, Microelectronic engineering, 30(1-4), 1996, pp. 179-182
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
179 - 182
Database
ISI
SICI code
0167-9317(1996)30:1-4<179:L(MRBE>2.0.ZU;2-K
Abstract
A two-aspherical-mirror system designed for large-area, high-resolutio n pattern replication has been developed. In order to expand the expos ure area to 20 mm x 25 mm, new critical-illumination optics and a scan ning mask stage synchronized with the wafer stage were developed. Thes e improvements enabled the reduction of patterns in a large exposure f ield.