FABRICATION OF 200NM FIELD-EFFECT TRANSISTORS BY X-RAY-LITHOGRAPHY USING A LASER-PLASMA X-RAY SOURCE

The laser-plasma X-ray source at the Rutherford Appleton Laboratory ha s been used in a series of preliminary lithography trials in order to establish the feasibility of using this source for deep submicron devi ce fabrication. These trials have provided a demonstration of photores ist linewidths down to 130nm and functional silicon FETs have been pro duced with 200nm gate electrodes. These devices show peak transconduct ances of 220mS/mm and 100mS/mm for n-channel and p-channel cases respe ctively. This paper summarises the lithographic procedures and resulti ng device characteristics.