APPLICATION OF PLASMA-POLYMERIZED METHYLSILANE IN AN ALL DRY RESIST PROCESS FOR 193 AND 248 NM LITHOGRAPHY

Authors
JOUBERT O WEIDMAN TW JOSHI AM KOSTELAK RL
Citation
O. Joubert et al., APPLICATION OF PLASMA-POLYMERIZED METHYLSILANE IN AN ALL DRY RESIST PROCESS FOR 193 AND 248 NM LITHOGRAPHY, Microelectronic engineering, 30(1-4), 1996, pp. 275-278
Citations number
2
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
275 - 278
Database
ISI
SICI code
0167-9317(1996)30:1-4<275:AOPMIA>2.0.ZU;2-D
Abstract
The performance of Plasma Polymerized Methylsilane (PPMS) as a single layer and bilayer resist system at 248 nm advanced lithography are exp osed. PPMS based photolithographic processed are shown to be extendibl e for use in 193 nm lithography.