LITHOGRAPHIC AND PATTERN TRANSFER OF A NOVEL DEEP-UV PHOTORESIST - ARCH2

We have developed a novel chemically amplified deep-UV photoresist cal led ARCH2. ARCH2 displays a resolution of <0.23 mu m with a DOF of 1.0 mu m at 0.25 mu m. This material also displays superior time delay st ability (>8 hours). The post exposure bake (FEB) temperature was varie d from 100 degrees C to 120 degrees C and the FEB time was varied from 60s to 180s. This had very little effect on the CD of the resist prof iles. Preliminary etching experiments in a conventional reactive ion e tcher were then carried out using CF4 to etch TIN. In these experiment s the ARCH2 etched at a similar rate as conventional Novolac.