REALIZATION OF IRREGULAR QUARTER-MICRON PATTERNS IN THICK RESISTS USING AN ADVANCED E-BEAM SENSITIVE TSI PROCESS

The TSI process enables a high resolution of lines and spaces in thick resists by e-beam direct writing. The realisation of irregular patter ns requires the compensation of the pattern-related backscattering by a proximity correction. The scattering parameters were determined by a new method. The non-complete elimination of the flow effect by an aqu eous presilylation development and the pattern-dependent deposited ene rgy cause variable silicon profile angles and impede the accurate CD r ealisation of irregular patterns. We developed guidelines for the choi ce of the process parameters enabling the compensation of CD deviation s and the preparation of irregular quarter micron patterns in 1.2 mu m thick resist.