ELECTRON-BEAM LITHOGRAPHY USING CHEMICALLY-AMPLIFIED RESIST - RESOLUTION AND PROFILE CONTROL

Authors
KUDRYASHOV VA KRASNOV VV HUQ SE PREWETT PD HALL TJ
Citation
Va. Kudryashov et al., ELECTRON-BEAM LITHOGRAPHY USING CHEMICALLY-AMPLIFIED RESIST - RESOLUTION AND PROFILE CONTROL, Microelectronic engineering, 30(1-4), 1996, pp. 305-308
Citations number
4
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
305 - 308
Database
ISI
SICI code
0167-9317(1996)30:1-4<305:ELUCR->2.0.ZU;2-D
Abstract
The effect of post exposure bake and softbake conditions on the sensit ivity of AZPN114 has been investigated experimentally. A bilayer syste m for undercut structures has been achieved using two layers of AZPN11 4 with different softbake temperatures. A single layer of AZPN114 has also been used to produce undercut and tailored resist profiles by two different multiple exposure strategies at different beam energies.