P. Hudek et al., EVALUATION OF CHEMICALLY AMPLIFIED DEEP UV RESIST FOR MICROMACHINING USING E-BEAM LITHOGRAPHY AND DRY-ETCHING, Microelectronic engineering, 30(1-4), 1996, pp. 309-312
The electron-beam response of new chemically amplified positive multi-
component ARCH-resist family (ARCH and ARCH2) and the suitability of p
attern transfer through single layer has been evaluated. The electron-
beam lithographic parameters for thicker layers (1-2 mu m) of these re
sists and the optimization possibilities of the exposure and etching c
onditions were investigated as well. Under fixed resist-handling proce
sses, both resists exhibit high sensitivity (< 10 mu C/cm(2)) and an e
normous high contrast. The study includes the effects of resist-proces
s variations on the global 3-D resist-relief structure. Vertical side-
walls of the resist profile is a necessary condition for a successful
deep-, and a good CD-controlled anizotropical pattern transfer with hi
gh aspect ratio of structures into the substrate.