EVALUATION OF CHEMICALLY AMPLIFIED DEEP UV RESIST FOR MICROMACHINING USING E-BEAM LITHOGRAPHY AND DRY-ETCHING

The electron-beam response of new chemically amplified positive multi- component ARCH-resist family (ARCH and ARCH2) and the suitability of p attern transfer through single layer has been evaluated. The electron- beam lithographic parameters for thicker layers (1-2 mu m) of these re sists and the optimization possibilities of the exposure and etching c onditions were investigated as well. Under fixed resist-handling proce sses, both resists exhibit high sensitivity (< 10 mu C/cm(2)) and an e normous high contrast. The study includes the effects of resist-proces s variations on the global 3-D resist-relief structure. Vertical side- walls of the resist profile is a necessary condition for a successful deep-, and a good CD-controlled anizotropical pattern transfer with hi gh aspect ratio of structures into the substrate.