NOVEL-APPROACH TO SIMULATION OF THE SILYLATION BAKE IN THE DESIRE PROCESS

Authors
WEISS M GOETHALS M
Citation
M. Weiss et M. Goethals, NOVEL-APPROACH TO SIMULATION OF THE SILYLATION BAKE IN THE DESIRE PROCESS, Microelectronic engineering, 30(1-4), 1996, pp. 313-316
Citations number
2
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
313 - 316
Database
ISI
SICI code
0167-9317(1996)30:1-4<313:NTSOTS>2.0.ZU;2-4
Abstract
This contribution presents a simple quantitative model - the reaction dominated propagation model for the simulation of the silylation bake in the DESIRE process. This allows to do very effectively simulation o f three dimensional silylated resist patterns. The model is discussed and resist calibration is demonstrated for the i-line resist PLASMASK 206-I from JSR-Electronics