THE DEPENDENCE OF NANOSTRUCTURE ETCH RATES ON FEATURE SIZE

Citation
Jmf. Zachariasse et An. Broers, THE DEPENDENCE OF NANOSTRUCTURE ETCH RATES ON FEATURE SIZE, Microelectronic engineering, 30(1-4), 1996, pp. 349-352
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
349 - 352
Database
ISI
SICI code
0167-9317(1996)30:1-4<349:TDONER>2.0.ZU;2-J
Abstract
The feature size dependence of plasma etch rates has been the focus of recent theoretical and experimental study [1-3]. The effect, already problematic at submicron dimensions, can limit attainable structures a nd is expected to increase in importance as lateral dimensions are fur ther reduced. In this paper, the models previously reported are develo ped further and a new nanostructure trench sectioning technique is use d to extend etch rate measurements to features with lateral dimensions below 100 nn. The experimental results are compared to the new models .