ENERGY-DISTRIBUTIONS AND ANGULAR-DISTRIBUTIONS OF ARGON NEUTRALS AND THEIR INFLUENCE ON ETCHING PROFILES

Authors
BORNIG K JANES J JUNEMANN B
Citation
K. Bornig et al., ENERGY-DISTRIBUTIONS AND ANGULAR-DISTRIBUTIONS OF ARGON NEUTRALS AND THEIR INFLUENCE ON ETCHING PROFILES, Microelectronic engineering, 30(1-4), 1996, pp. 357-360
Citations number
3
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
357 - 360
Database
ISI
SICI code
0167-9317(1996)30:1-4<357:EAAOAN>2.0.ZU;2-W
Abstract
In a parallel plate 13.56 MHz reactor energetic argon neutrals are det ected by sampling neutrals through a 100 mu m orifice in the cathode. Experimental neutral energy distributions are compared with Monte Carl o simulations. In the simulation charge exchange collisions, elastic s cattering and multiple collisions of neutrals are taken into account. Experimental and theoretical energy distributions are in good agreemen t indicating that multiple scattering determines the energy distributi ons. With the calculated neutral angular distribution a three dimensio nal etch profile is simulated.