LAMINATED DRY FILM RESIST FOR MICROENGINEERING APPLICATIONS

Authors
ZHU J HOLMES AS ARNOLD J LAWES RA PREWETT PD
Citation
J. Zhu et al., LAMINATED DRY FILM RESIST FOR MICROENGINEERING APPLICATIONS, Microelectronic engineering, 30(1-4), 1996, pp. 365-368
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
365 - 368
Database
ISI
SICI code
0167-9317(1996)30:1-4<365:LDFRFM>2.0.ZU;2-#
Abstract
An innovative technology with a dry film resist (Riston) for use in mi crosystem engineering applications is presented. In view of the simpli city of forming a controllable resist thickness (20 - 100 mu m/level), inherent planarization for multilevel processes in 3D microsystems an d high, stable over-wafer thickness uniformity, we have investigated t he use of dry film resists to realise high aspect ratio microstructure s > 10:1 using both reactive ion etching (RIE) and excimer laser ablat ion.