R. Barth et al., ELECTRON-BEAM LITHOGRAPHY AND ION-IMPLANTATION TECHNIQUES FOR FABRICATION OF HIGH-T-C JOSEPHSON-JUNCTIONS, Microelectronic engineering, 30(1-4), 1996, pp. 407-410
Established semiconductor process technologies are demonstrated to be
suitable for the fabrication of high temperature superconductor (HTS)
Josephson junctions. Single YBCO bridges were modified by local oxygen
ion irradiation through a narrow slit in a PMMA mask which was formed
by electron beam lithography. The influence of slit dimension and irr
adiation dose was investigated. The critical current and normal resist
ance of the modified microbridges can be controled by these two parame
ters. Proximity coupling across the modified region is observed up to
a slit width of 250 nm. When exposed to microwave irradiation the micr
obridges exhibited Shapiro steps. In dc SQUIDs a voltage modulation as
a function of an applied magnetic flux is observed.