3 NM NICR WIRES MADE USING ELECTRON-BEAM LITHOGRAPHY AND PMMA RESIST

Authors
CUMMING DRS THOMS S WEAVER JMR BEAUMONT SP
Citation
Drs. Cumming et al., 3 NM NICR WIRES MADE USING ELECTRON-BEAM LITHOGRAPHY AND PMMA RESIST, Microelectronic engineering, 30(1-4), 1996, pp. 423-425
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
423 - 425
Database
ISI
SICI code
0167-9317(1996)30:1-4<423:3NNWMU>2.0.ZU;2-K
Abstract
We demonstrate the fabrication of sub -5 nm NiCr wires using conventio nal 100 kV electron beam lithography and PMMA resist technology. The w ires are short, and widen to continuous 20 nm wires at either end. The ultra high resolution is achieved using a novel exposure technique. T hese wires are believed to be the smallest features yet mane using thi s technology.