CHARACTERIZATION OF SUB-100 NM-MOS-TRANSISTORS PROCESSED BY OPTICAL LITHOGRAPHY AND A SIDEWALL-ETCHBACK TECHNIQUE

Authors
HORSTMANN JT HILLERINGMANN U GOSER K
Citation
Jt. Horstmann et al., CHARACTERIZATION OF SUB-100 NM-MOS-TRANSISTORS PROCESSED BY OPTICAL LITHOGRAPHY AND A SIDEWALL-ETCHBACK TECHNIQUE, Microelectronic engineering, 30(1-4), 1996, pp. 431-434
Citations number
5
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
431 - 434
Database
ISI
SICI code
0167-9317(1996)30:1-4<431:COSNPB>2.0.ZU;2-9
Abstract
This paper describes the fabrication of NMOS-transistors with a geomet ric gate length of down to 50 nm using conventional optical lithograph y and a modified sidewall-etchback process. Based on measurements the transistors are characterised and their device parameters are compared to simulations. Finally the procedures for further optimisation of th e process will be explained.