NANOSCALE ENGINEERING USING CONTROLLABLE FORMATION OF ULTRA-THIN CRACKS IN HETEROSTRUCTURES

Citation
Vy. Prinz et al., NANOSCALE ENGINEERING USING CONTROLLABLE FORMATION OF ULTRA-THIN CRACKS IN HETEROSTRUCTURES, Microelectronic engineering, 30(1-4), 1996, pp. 439-442
Citations number
8
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
439 - 442
Database
ISI
SICI code
0167-9317(1996)30:1-4<439:NEUCFO>2.0.ZU;2-M
Abstract
A new technique for fabrication of nano- and atomic- scale device elem ents and quantum systems which cannot be obtained by any other technol ogy is proposed. The technique is based an experimentally established possibility to create atomically sharp-edged cracks of a desired lengt h and direction in a given laver of heterostructure. Ultra-narrow (1 n m) and perfectly straight windows-slits in the GaAs laver-mask of semi conductor structures and atomicaly sharp -edged windows of a complicat ed form have been fabricfted for the fist time. It was shown, that the width of a window-slit can be varied with high precision needed for a self-alignment fabrication technology. Nerv maskless techniques for f abricating nanoscale elements are described.