Vy. Prinz et al., NANOSCALE ENGINEERING USING CONTROLLABLE FORMATION OF ULTRA-THIN CRACKS IN HETEROSTRUCTURES, Microelectronic engineering, 30(1-4), 1996, pp. 439-442
A new technique for fabrication of nano- and atomic- scale device elem
ents and quantum systems which cannot be obtained by any other technol
ogy is proposed. The technique is based an experimentally established
possibility to create atomically sharp-edged cracks of a desired lengt
h and direction in a given laver of heterostructure. Ultra-narrow (1 n
m) and perfectly straight windows-slits in the GaAs laver-mask of semi
conductor structures and atomicaly sharp -edged windows of a complicat
ed form have been fabricfted for the fist time. It was shown, that the
width of a window-slit can be varied with high precision needed for a
self-alignment fabrication technology. Nerv maskless techniques for f
abricating nanoscale elements are described.