A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/

Authors
BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation
F. Benistant et al., A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/, Microelectronic engineering, 30(1-4), 1996, pp. 459-462
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
459 - 462
Database
ISI
SICI code
0167-9317(1996)30:1-4<459:A0MNMB>2.0.ZU;2-4
Abstract
In this paper, we present a 0.10 mu m NMOS process to achieve devices with reduced short channel effect (SCE) and good current drive capabil ity. Full compatible Chemical Amplified Resist (CAR) process between D UV and e-beam lithography allowed us to use hybride lithography at gat e level. For the first time, we show that the conventional gate reoxid ation is a limiting step to process integration because of the Bird's Beak formation at the poly gate edge. Consequently, this process is re placed by a low thermal oxide deposition. In addition, Indium pocket i mplantations have been realized to improve the SCE.