SUBMICRON LIGA PROCESS FOR MOVABLE MICROSTRUCTURES

Citation
Mw. Borner et al., SUBMICRON LIGA PROCESS FOR MOVABLE MICROSTRUCTURES, Microelectronic engineering, 30(1-4), 1996, pp. 505-508
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
505 - 508
Database
ISI
SICI code
0167-9317(1996)30:1-4<505:SLPFMM>2.0.ZU;2-3
Abstract
The feasibility of making movable metal microstructures with lateral d imensions in the sub-micron range and aspect ratios of up to 100 was d emonstrated. These structures were manufactured by X-ray lithography i n resists approximately some ten micrometers high and with electroplat ed nickel. The small resist height, compared to deep X-ray lithography , allowed softer X-rays and lower absorbers on the mask to be used. Th erefore, no intermediate masks are needed and shorter beam times are p ossible. The small overall dimensions of devices with sub-micron dimen sions even with very high aspect ratios allow a much larger number of devices to be arranged on a wafer. This opens up a way to cost effecti ve manufacturing of movable microstructures on top of electronic circu its when the performance of the device is determined by the aspect rat io, not by its overall size.