ONE-LEVEL GRAY-TONE DESIGN - MASK DATA PREPARATION AND PATTERN TRANSFER

One-level gray-tone lithography, in spite of using common mask techniq ue and CMOS equipment, has quite different demands on data preparation and wafer processing. This paper reports on algorithms to transfer an initial height profile H-i(x,y) into a design representation shape nr (x,y) in the common data format GDSII, which could be used directly by a commercial mask shop. The great data amount of a reticle layout has been reduced significantly by a first order data compaction. The poss ibly nonlinear influences of the different process steps on the transf er function have been regarded. The specific parameters for the mask m aking and the resist process are determined. In the field of resist pa ttern transfer into a substrate material, a silicon etching process wa s evaluated.