APPLICATION OF THE SEMSPEC ELECTRON-BEAM INSPECTION SYSTEM TO IN-PROCESS DEFECT DETECTION ON SEMICONDUCTOR WAFERS

Authors
CASS TR HENDRICKS D JAU J DOHSE HJ BRODIE AD MEISBURGER WD
Citation
Tr. Cass et al., APPLICATION OF THE SEMSPEC ELECTRON-BEAM INSPECTION SYSTEM TO IN-PROCESS DEFECT DETECTION ON SEMICONDUCTOR WAFERS, Microelectronic engineering, 30(1-4), 1996, pp. 567-570
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
30
Issue
1-4
Year of publication
1996
Pages
567 - 570
Database
ISI
SICI code
0167-9317(1996)30:1-4<567:AOTSEI>2.0.ZU;2-6
Abstract
A scanning electron-beam wafer inspection system (SEMSpec) has been de veloped. This system uses a high current (30-50 nA) field emission sou rce to produce a low energy (800 eV) inspection beam. High speed digit al processing (10(8) pixels/sec) of the secondary electron images loca tes processing defects automatically, records their position and size, and provides a post-inspection review platform. It is estimated that the SEMSpec system is approximately 10(3) times faster than a conventi onal scanning electron microscope in capturing defect images.