CHARACTERIZATION OF BA0.5SR0.5TIO3 THIN-FILM CAPACITORS PRODUCED BY PULSED-LASER DEPOSITION

Authors
JIA QX ZHOU DS WU XD FOLTYN SR TIWARI P MITCHELL TE
Citation
Qx. Jia et al., CHARACTERIZATION OF BA0.5SR0.5TIO3 THIN-FILM CAPACITORS PRODUCED BY PULSED-LASER DEPOSITION, Integrated ferroelectrics, 10(1-4), 1995, pp. 73-79
Citations number
19
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics → ACNP
ISSN journal
10584587
Volume
10
Issue
1-4
Year of publication
1995
Pages
73 - 79
Database
ISI
SICI code
1058-4587(1995)10:1-4<73:COBTCP>2.0.ZU;2-7
Abstract
High crystallinity Ba0.5Sr0.5TiO3 thin films were deposited on LaAlO3 substrates by pulsed laser deposition. A conductive metallic oxide, Sr RuO3, provided not only a good bottom electrode for Ba0.5Sr0.5TiO3 but also an excellent seed layer for epitaxial growth of Ba0.5Sr0.5TiO3 o n it. The epitaxial nature of the Ba0.5Sr0.5TiO3 thin films on the LaA lO3 substrate was confirmed by x-ray diffraction, Rutherford backscatt ering spectroscopy, and cross-sectional transmission electron microsco py. The quite good dielectric and electrical properties of crystalline Ba0.5Sr0.5TiO3 thin films suggest that Ba0.5Sr0.5TiO3/SrRuO3 is a goo d combination in terms of structural, electrical, and dielectric prope rties of Ba0.5Sr0.5TiO3 thin films.