LASER ABLATION-DEPOSITED PZT THIN-FILMS FOR PIEZOELECTRIC MICROSENSORS AND MICROACTUATORS

Citation
As. Nickles et al., LASER ABLATION-DEPOSITED PZT THIN-FILMS FOR PIEZOELECTRIC MICROSENSORS AND MICROACTUATORS, Integrated ferroelectrics, 10(1-4), 1995, pp. 89-98
Citations number
5
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
ISSN journal
10584587
Volume
10
Issue
1-4
Year of publication
1995
Pages
89 - 98
Database
ISI
SICI code
1058-4587(1995)10:1-4<89:LAPTFP>2.0.ZU;2-E
Abstract
We report on growth and deposition process optimization of laser ablat ion-deposited Pb(Zr0.53Ti0.47)O-3 thin films for application in piezoe lectric microdevices. Films were grown on three different substrates: (100) cut LaAlO3 single crystals, Pt/Ti/SiO2/Si, and Pt/Ti/Si3+xN4/Si. On all three substrates, a deposition temperature of 620 degrees C yi elded perovskite films with good ferroelectric hysteresis properties. La0.5Sr0.5CoO3 bottom and top electrodes were used for all films. PZT films on Pt/Ti/SiO2/Si showed a variation of texture with film thickne ss. Thin membranes of PZT on Si3+xN4 were also fabricated.